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Magnetic-bubble memory technology
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ISBN: 0824767950 Year: 1978 Volume: 6 Publisher: New York (N.Y.): Dekker

Magnetoelectronics
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ISBN: 9780120884872 0120884879 9780080473253 0080473253 9786610968213 1280968214 Year: 2004 Publisher: Amsterdam San Diego, CA Elsevier

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Abstract

The arrival of the 'information age' took most people by surprise - including scientists and technologists. Today, research on better, smaller, and faster ways to store and transfer information continues to grow, and growing fast within this scope is the field of magnetoelectronics. With its possibilities as a magnetic storage technology capable of overcoming the vulnerabilities of CMOS (complementary metal on oxide semiconductor), magnetoelectronics promises to be an important installation in the information era.


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Main Memory Management on Relational Database Systems
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ISBN: 9783031132957 Year: 2022 Publisher: Cham Springer International Publishing :Imprint: Springer


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Main memory management on relational database systems
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ISBN: 3031132947 3031132955 Year: 2022 Publisher: Cham, Switzerland : Springer International Publishing,


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Introduction to magnetic random-access memory
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ISBN: 9781119009740 111900974X 9781119079415 1119079411 9781119079354 1119079357 Year: 2017 Publisher: Hoboken, New Jersey : [Piscataqay, New Jersey] : Wiley-IEEE Press, IEEE Xplore,

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Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons' spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities.


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Emerging Non-Volatile Memories
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ISBN: 1489975373 1489975365 Year: 2014 Publisher: New York, NY : Springer US : Imprint: Springer,

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This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.


Book
Micromagnetics and Recording Materials
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ISBN: 3642285767 9786613702814 3642285775 1280792426 Year: 2012 Publisher: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer,

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"Micromagnetics and Recording Materials" is a book trying to give a systematic theory of computational applied magnetism, based on Maxwell equations of fields and Landau-Lifshitz equations of magnetic moments. The focused magnetic materials are magnetic recording materials utilized in computer hard disk drives. Traditionally, “Micromagnetics” includes the areas of "magnetization curve theory", “domain theory" and “read and write process analyses in recording systems”. As Springer Briefs, this book includes the first two areas of micromagnetics. M-H loops of hard magnetic thin film media, soft magnetic layers and Tunneling MagnetoResistive spin valves are solved based on the microstructures of thin films. Static domain structures and dynamic switching processes are analyzed in the arbitrary-shaped magnetic devices such as write head pole tips and magnetic force microscope tips. The book is intended for researchers who are interested in applied magnetism and magnetic recording in all disciples of physical science.


Book
Emerging memory technologies : design, architecture, and applications
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ISBN: 1441995501 144199551X Year: 2014 Publisher: New York : Springer,

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This book explores the design implications of emerging, non-volatile memory (NVM) technologies on future computer memory hierarchy architecture designs. Since NVM technologies combine the speed of SRAM, the density of DRAM, and the non-volatility of Flash memory, they are very attractive as the basis for future universal memories. This book provides a holistic perspective on the topic, covering modeling, design, architecture and applications. The practical information included in this book will enable designers to exploit emerging memory technologies to improve significantly the performance/power/reliability of future, mainstream integrated circuits. • Provides a comprehensive reference on designing modern circuits with emerging, non-volatile memory technologies, such as MRAM and PCRAM; • Explores new design opportunities offered by emerging memory technologies, from a holistic perspective; • Describes topics in technology, modeling, architecture and applications; • Enables circuit designers to exploit emerging memory technologies to improve significantly the performance/power/reliability of future computing systems. .

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